band switching diode dan235u ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high frequency switching ? features 1)small mold type. (umd3) 2)high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit pd mw v r v tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - - 1.0 v i f =10ma reverse current i r - - 10 na v r =25v ct - - 1.2 pf v r =6v , f=1mhz forward resistance rf - - 0.9 ? i f =2ma , f=100mhz parameter capacitance between terminals storage temperature ? 55 to ? 125 reverse voltage (dc) 35 junction temperature 125 parameter limits power dissipation 150 umd3 0.9min. 1.6 0.65 1.3 0.8min 4.00.1 4.00.1 2.00.05 1.550.05 3.50.05 1.750.1 8.00.2 0.50.05 2.40.1 2.250.1 0 5.50.2 1.250.1 2.40.1 0.30.1 00.1 rohm : umd3 jeita : sc-70 jedec : sot-323 dot (year week factory) 2.00.2 2.10.1 1.250.1 0.30.1 `?? ? (3) 1.30.1 0.65 0.65 (2) (1) 0.150.05 0.90.1 0.70.1 0.1min 00.1 each lead has same dimension 1/3 2011.06 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
dan235u 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1 10 100 0.1 1 10 100 t ifsm 0 1 2 3 4 5 6 7 8 9 10 11 01 0 0 8.3ms ifsm 1cyc 8.3ms 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4 5 0 5 10 15 20 8.3ms ifsm 1cyc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 810 820 830 840 850 860 0.1 1 10 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 35 ta=125 ta= ? 25 ta=25 ta=75 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 100 0 110 0 ta= ? 25 ta=125 ta=75 ta=25 forward voltage : v f (mv) v f -i f characteristics forward current : i f (ma) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm disresion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time:t(s) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) trr dispersion map reverse recovery time:trr(ns) forward current : i f (ma) rf dispersion map forward operating resistance:rf( ? ) f=1mhz ave:834.0mv ta=25 i f =10ma n=30pcs ta=25 v r =25v n=30pcs ave:0.0285na ave:0.865pf ta=25 v r =6v f=1mhz n=10pcs ave:5.60a ave:1.20ns ta=25 v r =6v i f =10ma rl=100 ? irr=0.1*i r n=10pcs ave:0.630 ? ta=25 f=100mhz i f =2ma n=10pcs 1ms im=1ma i f =10ma 300us time mounted on epoxy board 2/3 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
dan235u 0 1 2 3 4 5 6 7 8 9 10 electrostatic ddischarge test esd(kv) esd dispersion map ave:1.55kv c=200pf r=0 ? ave:7.38kv c=100pf r=1.5k ? 3/3 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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